Dopant penetration studies through Hf silicate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1846138
Reference40 articles.
1. Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride
2. Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2interface electrical characteristics
3. Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices
4. High-κ gate dielectrics: Current status and materials properties considerations
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2. Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma;Applied Surface Science;2013-02
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