Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma-Reference-Cited by-同舟云学术

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Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Published:2013-02 Issue: Volume:266 Page:89-93
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Li-Tien,Chang Ming-Lun,Huang Jhih-Jie,Lin Hsin-Chih,Kuo Chin-Lung,Lee Min-Hung,Liu Chee Wee,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

National Science Council in Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

2. High-κ gate dielectrics: Current status and materials properties considerations

3. High dielectric constant gate oxides for metal oxide Si transistors

4. Band offsets of wide-band-gap oxides and implications for future electronic devices

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced performance of MoS2 phototransistors with ferroelectric HfLaON as gate dielectric through NH3-plasma treatment followed by rapid thermal annealing;Ceramics International;2023-12

2. Effect of Annealing Temperature on the Resistive Characteristics of Ag/Hfo 2 /P + -Si Storage Units;2023

3. Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films;Membranes;2022-06-22

4. Structural and electronic properties of HfO ₂ films on Si through H ₂ O ₂ wet oxidation with improved thermal stability;Surface and Interface Analysis;2022-04-16

5. Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric;IEEE Electron Device Letters;2020-09

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