Effect of Annealing Temperature on the Resistive Characteristics of Ag/Hfo 2 /P + -Si Storage Units

Author:

Liu Yue,Luan Kunzhi,He Yike,liu guishan,wang zhen

Publisher

Elsevier BV

Reference19 articles.

1. Investigation of switching uniformity in resistive memory via finite e lement simulation of conductive-filament formation;K H Min;Scientific Reports,2021

2. Dire ct evidence of lithium ion migration in resistive switching of lithium cobalt oxide nanobatteries;V S Nguyen;Small,2018

3. Flexible multifunctional aromatic polyimide film:highly efficient photoluminescence,resistive swit ching characteristic and electroluminescence;L J Qu;ACS Applied Materials and Interfaces,2018

4. Effect of transition metal element X(X=Mn, Fe, C o, and Ni)doping on performance of ZnO resistive memory;J J Guo;Acta Physica Sinica,2018

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