Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer-Reference-Cited by-同舟云学术

Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer

Published:2017-09 Issue:5 Volume:35 Page:051803
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Engelmann Sebastian U.,Bruce Robert L.,Joseph Eric A.,Fuller Nicholas C. M.,Graham William S.,Sikorski Edmund M.,Kohjasteh Mahmoud,Zhu Yu,Nakamura Masahiro,Ito Azumi,Matsumoto Hirokazu,Matsuura Goh,Suzuki Takefumi

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5003824

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