Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas-Reference-Cited by-同舟云学术

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Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas

Published:2008-07 Issue:4 Volume:26 Page:857-860
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim D. Y.,Lee H. J.,Jung H. Y.,Lee N.-E.,Kim T. G.,Kim B. H.,Ahn Jinho,Kim C. Y.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2902964

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EUV APSM mask prospects and challenges;Photomask Technology 2023;2023-11-21

2. Origin of defects on targets used to make extreme ultraviolet mask blanks;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

3. Highly Selective Etching of SnO₂ Absorber in Binary Mask Structure for Extreme Ultra-Violet Lithography;Journal of Nanoscience and Nanotechnology;2012-04-01

4. Origin of EUV mask blank defects from ion beam deposition;SPIE Proceedings;2012-03-29

5. Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07

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