Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography-Reference-Cited by-同舟云学术

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Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

Published:2010-07 Issue:4 Volume:28 Page:761-765
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Park Y. R.,Ahn J. H.,Kim J. S.,Kwon B. S.,Lee N.-E.,Kang H. Y.,Hwangbo C. K.,Ahn Jinho,Seo Hwan Seok

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3425639

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma;Japanese Journal of Applied Physics;2017-05-22

2. Extreme ultraviolet lithography and three dimensional integrated circuit—A review;Applied Physics Reviews;2014-03

3. Origin of defects on targets used to make extreme ultraviolet mask blanks;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

4. Origin of EUV mask blank defects from ion beam deposition;SPIE Proceedings;2012-03-29

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