Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma-Reference-Cited by-同舟云学术

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Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma

Published:2017-05-22 Issue:6S2 Volume:56 Page:06HD02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hirata Akiko,Fukasawa Masanaga,Shigetoshi Takushi,Okamoto Masaki,Nagahata Kazunori,Li Hu,Karahashi Kazuhiro,Hamaguchi Satoshi,Tatsumi Tetsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S2/a=06HD02/pdf

Reference30 articles.

1. Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of films

2. GaN transistors on Si for switching and high-frequency applications

3. Patterning Indium Tin Oxide and Indium Zinc Oxide Using Microcontact Printing and Wet Etching

4. The effect of solvent on the etching of ITO electrode

5. Plasma Etching of ITO Thin Films Using a CH4/H2Gas Mixture

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium tin oxide etch characteristics using CxH2x+2(x=1,2,3)/Ar;Materials Science in Semiconductor Processing;2023-06

2. Foundations of atomic-level plasma processing in nanoelectronics;Plasma Sources Science and Technology;2022-10-01

3. Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle;Japanese Journal of Applied Physics;2022-05-23

4. Why are physical sputtering yields similar for incident ions with different masses?—physical sputtering yields of the Lennard–Jones system;Journal of Physics D: Applied Physics;2022-03-08

5. Self-sputtering of the Lennard–Jones crystal;Physics of Plasmas;2022-02

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