Growth of CoSi2 on Si(001): Structure, defects, and resistivity-Reference-Cited by-同舟云学术

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Growth of CoSi2 on Si(001): Structure, defects, and resistivity

Published:1990-05 Issue:3 Volume:8 Page:3014-3018
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Jimenez J. R.,Schowalter L. J.,Hsiung L. M.,Rajan K.,Hashimoto Shin,Thompson R. D.,Iyer S. S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576622

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic and structural analysis of ultra-small-diameter metal disilicide nanowires;Journal of Applied Physics;2017-05-21

2. Epitaxial CoSi2 formation using an oxynitride buffer layer;Journal of Materials Research;2009-08

3. Photoemission study of cobalt interaction with the oxidized Si(100)2×1 surface;Surface Science;2006-06

4. Epitaxial Growth of CoSi[sub 2] Layer on a Si(100) Substrate Using a CoN[sub x] Interlayer Deposited by Reactive Sputtering;Journal of The Electrochemical Society;2006

5. Epitaxial Growth of CoSi[sub 2] on Si Using a CoN[sub x] Interlayer Deposited by Reactive Metallorganic Chemical Vapor Deposition;Electrochemical and Solid-State Letters;2005

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