Epitaxial Growth of CoSi[sub 2] on Si Using a CoN[sub x] Interlayer Deposited by Reactive Metallorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Epitaxial Growth of CoSi[sub 2] on Si Using a CoN[sub x] Interlayer Deposited by Reactive Metallorganic Chemical Vapor Deposition

Published:2005 Issue:11 Volume:8 Page:G324
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Sun Il,Lee Seung Ryul,Park Jong Ho,Ahn Byung Tae

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Silicides for integrated circuits: TiSi2 CoSi2

2. Growth of CoSi2 on Si(001): Structure, defects, and resistivity

3. Formation of buried epitaxial CoSi2 layer through diffusion mediated reaction

4. Epitaxial CoSi2formation on (001)Si by reactive deposition

5. Growth of epitaxial CoSi2on (100)Si

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN x interlayer deposited by MOCVD;Applied Physics A;2015-03-29

2. Improvement in Thermal Stability of Nickel Silicides Using NiN[sub x] Films;Journal of The Electrochemical Society;2010

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