Photoemission study of cobalt interaction with the oxidized Si(100)2×1 surface-Reference-Cited by-同舟云学术

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Photoemission study of cobalt interaction with the oxidized Si(100)2×1 surface

Published:2006-06 Issue:12 Volume:600 Page:2449-2456
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Gomoyunova M.V.,Pronin I.I.,Malygin D.E.,Gall N.R.,Vyalikh D.V.,Molodtsov S.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference35 articles.

1. Growth of cobalt and cobalt disilicide on Si(100)

2. Preparation-dependent Co/Si(100) (2×1) interface growth: Spontaneous silicide formation versus interstitial-site mechanism

3. CoSi2 on Si(100): LEED investigations of the c(2 × 2) and (2√2 × √2) phases and comparison to a bulk crystal CoSi2(100) surface

4. Atomic structure of ultrathin Co layer on Si(001)(2×1) at room temperature

5. Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parameters

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1. Formation and magnetic properties of ultrathin cobalt silicides films on Si surface;ST PETER POLY U J-PH;2023

2. Size-Dependent Oxidative Stability of Silicon Nanoclusters Mixed with a Tantalum Atom;The Journal of Physical Chemistry C;2022-03-01

3. Anisotropy of the surface energy of silicides of some metals;Bulletin of the Karaganda University. "Physics" Series;2021-12-30

4. Interfacial Oxidation of Ta-Encapsulating Si16 Cage Superatoms (Ta@Si16) on Strontium Titanate Substrates;The Journal of Physical Chemistry C;2020-12-10

5. Obtaining nanoscale CoSiO/Si/CoSi2 systems for increasing the range of light ray absorption energy;IOP Conference Series: Earth and Environmental Science;2020-12-01

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