Atomic structure of ultrathin Co layer on Si(001)(2×1) at room temperature-Reference-Cited by-同舟云学术

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Atomic structure of ultrathin Co layer on Si(001)(2×1) at room temperature

Published:2000-05 Issue:1-3 Volume:453 Page:L309-L314
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Cho W.S.,Kim J.Y.,Park N.G.,Lyo I.W.,Jeong K.,Kim S.S.,Choi D.S.,Whang C.N.,Chae K.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference14 articles.

1. Refractory silicides for integrated circuits

2. Epitaxial CoSi2formation on (001)Si by reactive deposition

3. Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy

4. Surface study of thin epitaxial CoSi2/Si(100) layers by scanning tunneling microscopy and reflection high-energy electron diffraction

5. Growth of cobalt and cobalt disilicide on Si(100)

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1. The Effect of the Formation of Silicides on the Resistivity of Silicon;Technical Physics Letters;2019-04

2. Co on the H-passivated Si(001) surface: Density-functional calculations;Physica B: Condensed Matter;2018-08

3. Towards a Mn–Co surface alloy: Scanning Tunneling Microscopy (STM) study of Co adsorption on Si(100) and its interaction with Mn wires;Surface Science;2014-02

4. Formation and magnetic properties of the silicon-cobalt interface;Physics of the Solid State;2013-02

5. Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering;Advances in Materials Science and Engineering;2012

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