High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology-Reference-Cited by-同舟云学术

High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology

Published:2019-03 Issue:2 Volume:37 Page:021603
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Lenk Claudia¹^ORCID,Krivoshapkina Yana¹,Hofmann Martin¹,Lenk Steve¹,Ivanov Tzvetan¹,Rangelow Ivo W.¹^ORCID,Ahmad Ahmad²,Reum Alexander²,Holz Mathias²,Glinsner Thomas³,Eibelhuber Martin³,Treiblmayr Dominik³,Schamberger Barbara³,Chouiki Mustapha³,Chan Boon Teik⁴,el Otell Ziad⁴,de Marneffe Jean-François⁴^ORCID

Affiliation:

1. Department of Micro- and Nanoelectronic Systems, Technische Universität Ilmenau, Gustav-Kirchhoff-Straße 1, 98693 Ilmenau, Germany

2. Nanoanalytik GmbH, Ehrenbergstr. 1, 98693 Ilmenau, Germany

3. EV Group, 4782 St. Florian am Inn, Austria

4. IMEC, Kapeldreef 75, 3001 Leuven, Belgium

Funder

Deutsche Forschungsgemeinschaft

FP7 Ideas: European Research Council

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5067269

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