Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multi-cycle Chamber Conditioning for Plasma Etching of SiO2: From Optimization to Stability in Lot Processing;Plasma Chemistry and Plasma Processing;2024-07-08
2. Etch selectivity during plasma-assisted etching of SiO2 and SiNx: Transitioning from reactive ion etching to atomic layer etching;Journal of Vacuum Science & Technology A;2020-09
3. Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas;Journal of Vacuum Science & Technology A;2019-09
4. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2;ACS Applied Materials & Interfaces;2017-08-28
5. Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-07
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