Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas-Reference-Cited by-同舟云学术

Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas

Published:2019-09 Issue:5 Volume:37 Page:051301
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Mori Masahito¹,Osano Yugo²,Irie Shoki²,Eriguchi Koji²,Ono Kouichi²

Affiliation:

1. Hitachi High-Technologies Corporation, 794, Higashitoyoi, Kudamatsu City, Yamaguchi 744-0002, Japan

2. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5091673

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