Investigation of In contacts on atomically clean GaAs(110) surfaces
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.576532
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoemission study of the metal deposition on the (NH4)2Sx-treated GaAs(100) surface at room temperature;Journal of Electron Spectroscopy and Related Phenomena;1999-06
2. Effects of surface chemical treatment on the formation of metal GaAs interfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-03
3. Photoemission study of metal deposition on sulfur-treated GaAs(100);Applied Surface Science;1998-06
4. Temperature effects in the bonding and growth mode of In on GaAs(110);Journal of Physics: Condensed Matter;1997-10-06
5. Photoemission study of the formation of intimate In–InGaAs(100) contacts at room and cryogenic temperatures;Journal of Applied Physics;1997-06-15
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