Photoemission study of the metal deposition on the (NH4)2Sx-treated GaAs(100) surface at room temperature-Reference-Cited by-同舟云学术

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Photoemission study of the metal deposition on the (NH4)2Sx-treated GaAs(100) surface at room temperature

Published:1999-06 Issue: Volume:101-103 Page:315-320
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Shoji Daisei,Shinohara Masanori,Kondo Yusuke,Niwano Michio,Miyamoto Nobuo

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. L.J. Brillson (Ed.), Contacts To Semiconductors–Fundamentals and Technology, Noyes, Park Ridge, 1993.

2. The advanced unified defect model for Schottky barrier formation

3. Au-GaAs(110) interface: Photoemission studies of the effects of temperature

4. Metal–anion bond strength and room temperature diffusion at metal/GaAs interfaces: Transition versus rare‐earth versus Au metal overlayers

5. Investigation of In contacts on atomically clean GaAs(110) surfaces

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