Optoelectronic properties of transparent oxide semiconductor ASnO3 (A = Ba, Sr, and Ca) epitaxial films and thin film transistors
Author:
Affiliation:
1. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
2. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
Funder
Grants-In-Aid for Innovation Areas
China Scholarships Council
Nippon Sheet Glass Foundation for Materials Science and Engineering
Dynamic Alliance for open Innovation Bridging Human, Environment and Materials
Network Joint Research Centre for Materials and Devices
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001474
Reference61 articles.
1. Transparent Oxide Semiconductors: Fundamentals and Recent Progress
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. How we made the IGZO transistor
4. High Mobility in a Stable Transparent Perovskite Oxide
5. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
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