Application of molecular dynamics for low-energy ion implantation in crystalline silicon-Reference-Cited by-同舟云学术

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Application of molecular dynamics for low-energy ion implantation in crystalline silicon

Published:2006 Issue:1 Volume:24 Page:462
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chan H. Y.,Srinivasan M. P.,Montgomery N. J.,Mulcahy C. P. A.,Biswas S.,Gossmann H.-J. L.,Harris M.,Nordlund K.,Benistant F.,Ng C. M.,Gui D,Chan L.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the accuracy of ion implantation simulations through the use of DFT-MD methodology;Physica B: Condensed Matter;2024-02

2. Simulation study of surface sputtering and distribution of ions in silicon due to low-energy high-fluence cobalt irradiation;Surfaces and Interfaces;2021-06

3. Surface morphology and interface chemistry under ion irradiation – Simultaneous atomistic simulation of collisional and thermal kinetics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-12

4. Physical Mechanism of Nitrogen Implantation Into Silicon Using Molecular Dynamics Simulation;Journal of Computational and Theoretical Nanoscience;2011-07-01

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