Surface morphology and interface chemistry under ion irradiation – Simultaneous atomistic simulation of collisional and thermal kinetics
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference35 articles.
1. The molecular dynamics simulation of ion-induced ripple growth;Süle;J. Chem. Phys.,2009
2. Simulations of dynamical stabilization of Ag–Cu nanocomposites by ion-beam processing;Enrique;J. Appl. Phys.,2003
3. Modelling the carbon snoek peak in ferrite: coupling molecular dynamics and kinetic Monte-Carlo simulations;Garruchet;Comput. Mater. Sci.,2008
4. Atomic-scale self-organization of Fe nanostripes on stepped Cu(111) surfaces: molecular dynamics and kinetic Monte Carlo simulations;Negulyaev;Phys. Rev. B,2008
5. Simulations of submicrometer-scale roughening on ion-bombarded solid surfaces;Koponen;Phys. Rev. B,1996
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate;Semiconductors;2023-01
2. On the role of ion potential energy in low energy HiPIMS deposition: An atomistic simulation;Surface and Coatings Technology;2021-11
3. X-ray emission for Ar11+ ions impacting on various targets in the collisions near the Bohr velocity*;Chinese Physics B;2021-07-01
4. Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition;Journal of Applied Physics;2019-06-14
5. Molecular dynamics studies of ion beam implantation and patterning of silicon: Effect of noble gas cluster formation;Physical Review B;2018-06-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3