Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopy-Reference-Cited by-同舟云学术

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Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopy

Published:1992-07 Issue:4 Volume:10 Page:2303-2307
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Yarmoff J. A.,Shuh D. K.,Durbin T. D.,Lo C. W.,Lapiano‐Smith D. A.,McFeely F. R.,Himpsel F. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577935

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature;Applied Surface Science;2021-12

2. Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface;Applied Surface Science;2019-06

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4. Electron-enhanced atomic layer deposition of silicon thin films at room temperature;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-01

5. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane;Applied Surface Science;2013-11

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