Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2
Author:
Affiliation:
1. Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5600MB, The Netherlands
2. Lam Research Corporation, Portland, Oregon 97062
Funder
Lam Research
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/6.0000652
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN;The Journal of Chemical Physics;2024-05-22
3. Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation;Chemical Engineering Journal;2024-05
4. Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides;ACS Applied Materials & Interfaces;2023-11-15
5. Area-Selective Deposition by Cyclic Adsorption and Removal of 1-Nitropropane;The Journal of Physical Chemistry A;2023-09-08
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