Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers-Reference-Cited by-同舟云学术

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Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

Published:2014-11 Issue:6 Volume:32 Page:060603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Liu Peizhi,Li Guoliang,Duscher Gerd,Sharma Yogesh K.,Ahyi Ayayi C.,Isaacs-Smith Tamara,Williams John R.,Dhar Sarit

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4897377

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Post-Trench Process Treatment on Electron Scattering Mechanisms in 4H-SiC Trench MOSFETs;IEEE Transactions on Electron Devices;2023-04

2. Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs;Journal of Applied Physics;2022-04-14

3. Oxygen atom ordering on SiO2/4H-SiC {0001} polar interfaces formed by wet oxidation;Acta Materialia;2021-12

4. Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors;Journal of Applied Physics;2021-05-21

5. Defect engineering in graphene-based nanospheres enhanced hydrogen evolution reaction performance of ruthenium nanoparticles;Carbon;2020-09

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