Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices-Reference-Cited by-同舟云学术

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Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

Published:1985-05 Issue:3 Volume:3 Page:867-872
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Richard P. D.,Markunas R. J.,Lucovsky G.,Fountain G. G.,Mansour A. N.,Tsu D. V.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573334

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