Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates-Reference-Cited by-同舟云学术

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Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

Published:2002-05 Issue:3 Volume:20 Page:1120-1124
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sheng S. R.,Dion M.,McAlister S. P.,Rowell N. L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1464840

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pile-up and heat effect on the mechanical response of SiGe on Si(0 0 1) substrate during nanoscratching and nanoindentation using molecular dynamics;Computational Materials Science;2020-03

2. High Quality Silicon Cap Layer for 28nm and Beyond PMOS Processes;ECS Transactions;2013-03-15

3. A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques;Journal of Crystal Growth;2012-07

4. Evaluating nanotribological behavior of annealing Si0.8Ge0.2/Si films;Microelectronics Reliability;2011-12

5. Nanoscratch studies of SiGe epitaxial layer damage on the Si substrate;Journal of Physics and Chemistry of Solids;2011-06

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