Flexible atomic layer deposition system for coating porous materials

Abstract

Herein, we describe an atomic layer deposition (ALD) system that is optimized for the growth of thin films on high-surface-area, porous materials. The system incorporates a moveable dual-zone furnace allowing for rapid transfer of a powder substrate between heating zones whose temperatures are optimized for precursor adsorption and oxidative removal of the precursor ligands. The reactor can both be evacuated, eliminating the need for a carrier gas during precursor exposure, and rotated, to enhance contact between a powder support and the gas phase, both of which help us to minimize mass transfer limitations in the pores during film growth. The capabilities of the ALD system were demonstrated by growing La2O3, Fe2O3, and LaFeO3 films on a 120 m2 g−1 MgAl2O4 powder. Analysis of these films using scanning transmission electron microscopy and temperature-programmed desorption of 2-propanol confirmed the conformal nature of the oxide films.