Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for a two-terminal threshold switch-Reference-Cited by-同舟云学术

Voltage-triggered insulator-to-metal transition of ALD NbOx thin films for a two-terminal threshold switch

Published:2020 Issue:41 Volume:8 Page:14365-14369
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Narae¹²³⁴,Kim Yong Tae¹⁵⁶⁷⁴,Park Yunkyu¹²³⁴,Cho Jae Yu¹⁵⁶⁷⁴,Oh Seung Soo¹²³⁴^ORCID,Heo Jaeyeong¹⁵⁶⁷⁴^ORCID,Son Junwoo¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering (MSE)

2. Pohang University of Science and Technology (POSTECH)

3. Pohang 37673

4. Republic of Korea

5. and Optoelectronics Convergence Research Center

6. Chonnam National University

7. Gwangju 61186

Abstract

We report two-terminal threshold devices that use niobium oxide (NbO_x) thin films that were synthesized using atomic layer deposition (ALD) then pulsed-laser annealing.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC04137H

Reference20 articles.

1. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

2. A heterojunction modulation-doped Mott transistor

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5. Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films

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