Atomic layer deposited HfO[sub 2]/HfSi[sub x]O[sub y]N[sub z] stacked gate dielectrics for metal-oxide-semiconductor structures-Reference-Cited by-同舟云学术

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Atomic layer deposited HfO[sub 2]/HfSi[sub x]O[sub y]N[sub z] stacked gate dielectrics for metal-oxide-semiconductor structures

Published:2007 Issue:6 Volume:25 Page:1922
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Seokhoon,Woo Sanghyun,Kim Hyungchul,Jeong Wooho,Park Taeyong,Kim Honggyu,Kim Sung Bae,Jeon Hyeongtag

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of thin films: from a chemistry perspective;International Journal of Extreme Manufacturing;2023-06-14

2. New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell;Journal of Vacuum Science & Technology A;2018-11

3. Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films;Journal of Applied Physics;2018-05-14

4. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

5. Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-09

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