Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films-Reference-Cited by-同舟云学术

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Plasma-enhanced atomic layer deposition of highly transparent zinc oxy-sulfide thin films

Published:2018-05-14 Issue:18 Volume:123 Page:185306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bugot C.¹²,Schneider N.¹³,Lincot D.¹³,Donsanti F.¹²

Affiliation:

1. Institut Photovoltaïque d'Ile-de-France (IPVF), 30 Route Départementale 128, 91120 Palaiseau, France

2. EDF R&D, 30 Route Départementale 128, 91120 Palaiseau, France

3. CNRS, Institut Photovoltaïque d'Ile-de-France (IPVF), UMR 9006, 30 Route Départementale 128, 91120 Palaiseau, France

Funder

Université Pierre et Marie Curie

Électricité de France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026465

Reference60 articles.

1. Structural properties and bandgap bowing of ZnO1−xSx thin films deposited by reactive sputtering

2. Zn(O,S) buffer layers by atomic layer deposition in Cu(In,Ga)Se2 based thin film solar cells: Band alignment and sulfur gradient

3. Zinc oxysulfide thin films grown by atomic layer deposition

4. Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se2 solar cells

5. Sputtered Zn(O,S) buffer layers for CIGS solar modules-from lab to pilot production

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3. Heterojunction interface passivation strategy for Cu(In1-x,Gax)Se2 solar cell with nano-level engineering of Zn-based buffer structure via atomic layer deposition method;Solar Energy Materials and Solar Cells;2021-06

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