Cut-and-pasting ligands: The structure/function relationships of a thermally robust Mo(VI) precursor
Author:
Affiliation:
1. Department of Chemistry, Carleton University, 1125 Colonel by Drive, Ottawa, Ontario K1S 5B6, Canada
2. Department of Chemistry, Saint Mary's University, 923 Robie Street, Halifax, Nova Scotia B3H 3C3, Canada
Abstract
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0002254
Reference90 articles.
1. Atomic Layer Deposition of Molybdenum Nitride Thin Films for Cu Metallizations
2. High performance few-layer MoS 2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition
3. Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability
4. Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2
5. Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond
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