High performance few-layer MoS 2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition-Reference-Cited by-同舟云学术

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High performance few-layer MoS 2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition

Published:2017-12-15 Issue:1 Volume:5 Page:015028
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Zhang Tianbao,Wang Yang,Xu Jing,Chen Lin,Zhu Hao^ORCID,Sun Qingqing,Ding Shijin^ORCID,Zhang David Wei

Funder

National Major Projects of Science and Technology

Support Plans for the Youth Top-Notch Talents of China

National High Technology Research and Development Program

Shanghai Pujiang Program

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa9ea5/pdf

Reference45 articles.

1. Atomic-Scale Structure of Single-LayerMoS2Nanoclusters

2. Thin-Film Transistors

3. The path to ubiquitous and low-cost organic electronic appliances on plastic

4. Organic thin-film transistors: A review of recent advances

5. Monolayer MoS2 Heterojunction Solar Cells

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1. Enhance the Electrical and Photoelectrical Performance of MoS₂ Transistor With Polyimide Gate Dielectric by Microwave Annealing;IEEE Transactions on Electron Devices;2024-04

2. Atomic Layer Deposition of Transition-Metal Dichalcogenides;Crystal Growth & Design;2024-01-04

3. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern;Opto-Electronics Review;2024-01-03

4. 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture;Nature Materials;2023-09-28

5. Gate‐Last MoS₂ Transistors for Active‐Matrix Display Driving Circuits;Advanced Functional Materials;2023-08-29

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