12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture-Reference-Cited by-同舟云学术

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Published:2023-09-28 Issue:11 Volume:22 Page:1324-1331
ISSN:1476-1122
Container-title:Nature Materials
language:en
Short-container-title:Nat. Mater.

Author:

Xia Yin,Chen Xinyu,Wei Jinchen^ORCID,Wang Shuiyuan^ORCID,Chen Shiyou^ORCID,Wu Simin,Ji Minbiao,Sun Zhengzong^ORCID,Xu Zihan^ORCID,Bao Wenzhong^ORCID,Zhou Peng^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://www.nature.com/articles/s41563-023-01671-5.pdf

Reference47 articles.

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2. Wu, F. et al. Vertical MoS2 transistors with sub-1-nm gate lengths. Nature 603, 259–264 (2022).

3. Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).

4. Wang, Y. et al. An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations. Nat. Commun. 12, 3347 (2021).

5. Ding, Y. et al. A semi‐floating memory with 535% enhancement of refresh time by local field modulation. Adv. Funct. Mater. 30, 1908089 (2020).

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