Atomic Layer Deposition of Transition-Metal Dichalcogenides-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of Transition-Metal Dichalcogenides

Published:2024-01-04 Issue:5 Volume:24 Page:1865-1879
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Li Zhipu¹,Zhao Xun¹,Wu Shiru¹,Lu Min¹^ORCID,Xie Xiaoji¹^ORCID,Yan Jiaxu¹²³^ORCID

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing 211816, P. R. China

2. Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China

3. University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China

Funder

Natural Science Foundation of Jiangsu Province

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01044

Reference89 articles.

1. 2D Group IVB Transition Metal Dichalcogenides

2. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

3. Ultrathin Two‐Dimensional Multinary Layered Metal Chalcogenide Nanomaterials

4. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

5. Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x)Se2xAlloys with Distorted 1T Structure

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1. Mechanistically Informed Strategies for Site-Selective Atomic Layer Deposition;Chemistry of Materials;2024-09-13

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