Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers-Reference-Cited by-同舟云学术

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Published:2021-07 Issue:4 Volume:39 Page:043202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Bae Soo-Hyun¹,Ryoo Hyun-Joo¹,Seong Nak-Jin²,Choi Kyu-Jeong²,Kim Gi-Heon³,Yoon Sung-Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, South Korea

2. NCD Co. Ltd, Daejeon 34015, South Korea

3. Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001049

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