Impact of in situ SiN[sub x] layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application;Journal of Vacuum Science & Technology B;2024-08-02
2. Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric;Diamond and Related Materials;2020-11
3. Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric;IEEE T ELECTRON DEV;2015
4. Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition;Applied Physics Letters;2014-09-08
5. In situ growth of SiNxas gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition;Applied Physics Express;2014-08-28
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