Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Funder
Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Region Government
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4895677
Reference24 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs
3. HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
4. Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
5. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions
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