HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation-Reference-Cited by-同舟云学术

HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

Published:2006-05 Issue:7 Volume:203 Page:1851-1855
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Higashiwaki M.,Onojima N.,Matsui T.,Mimura T.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. T. Palacios, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, 63rd Device Research Conference (DRC), Conference Digest (2005), p. 181.

2. K. S. Boutros, W. B. Luo, and K. Shinohara, 63rd Device Research Conference (DRC), Conference Digest (2005), p. 183.

3. Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphire

4. GaN/AlGaN high electron mobility transistors with f of 110 GHz

5. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects;Physica Scripta;2024-03-27

2. Nanoscale material parameters based modeling of thermal noise in GaN HEMTs;Semiconductor Science and Technology;2020-12-10

3. Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition;Applied Physics Letters;2014-09-08

4. Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers;Japanese Journal of Applied Physics;2014-08-29

5. Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor;Applied Physics Letters;2011-10-10