W nucleation on TiN from WF6 and SiH4-Reference-Cited by-同舟云学术

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W nucleation on TiN from WF6 and SiH4

Published:1994-07 Issue:4 Volume:12 Page:1032-1038
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lantz S. L.,Bell A. E.,Ford W. K.,Danielson D.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579280

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Kinetic study on heterogeneous nucleation and incubation period during chemical vapor deposition;The Journal of Chemical Physics;2023-03-22

3. Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature;The Journal of Chemical Physics;2019-03-14

4. Fluorine Effects Originating From the CVD-W Process on Charge-Trap Flash Memory Cells;IEEE Transactions on Electron Devices;2019-01

5. Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD;The Journal of Chemical Physics;2017-02-07

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