Ge-rich Si[sub 1−x]Ge[sub x] nanocrystal formation by the oxidation of an as-deposited thin amorphous Si[sub 0.7]Ge[sub 0.3] layer
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Published:2002
Issue:2
Volume:20
Page:631
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Yoon Tae-Sik,Kim Ki-Bum
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
10 articles.
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