Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas-Reference-Cited by-同舟云学术

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Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas

Published:1995-03 Issue:2 Volume:13 Page:214
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Guinn K. V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 83 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sidewall chemical analysis of plasma-etched nano-patterns using tilted X-ray photoelectron spectroscopy combined with in-situ ion sputtering;Applied Surface Science;2021-04

2. Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas;Journal of Vacuum Science & Technology A;2019-09

3. Foundations of low-temperature plasma enhanced materials synthesis and etching;Plasma Sources Science and Technology;2018-02-12

4. Temperature dependence of protection layer formation on organic trench sidewall in H2/N2plasma etching with control of substrate temperature;Japanese Journal of Applied Physics;2017-06-14

5. Trenched 4H-SiC with tapered sidewall formed by Cl2/O2 reactive ion etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-11

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