Sidewall chemical analysis of plasma-etched nano-patterns using tilted X-ray photoelectron spectroscopy combined with in-situ ion sputtering

Author:

Lee Jaemin,Lee Hyun Woo,Kwon Kwang-Ho

Funder

Korea University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference28 articles.

1. Plasma etching: Yesterday, today, and tomorrow;Donnelly;J. Vacuum Sci. Technol. A: Vacuum, Surf. Films,2013

2. Sidewall surface chemistry in directional etching processes;Oehrlein;Mater. Sci. Eng.: R: Rep.,1998

3. X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes;Desvoivres;J. Vacuum Sci. Technol. B: Microelectronics Nanometer Struct. Processing, Measure., Phenomena,2001

4. Plasma Etching Processes for CMOS Devices Realization;Posseme,2017

5. Pulsed high-density plasmas for advanced dry etching processes;Banna;J. Vacuum Sci. Technol. A: Vacuum, Surf. Films,2012

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