Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C[sub 4]F[sub 8]- and CF[sub 4]-based discharges-Reference-Cited by-同舟云学术

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Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C[sub 4]F[sub 8]- and CF[sub 4]-based discharges

Published:2009 Issue:3 Volume:27 Page:1165
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Engelmann S.,Bruce R. L.,Weilnboeck F.,Sumiya M.,Kwon T.,Phaneuf R.,Oehrlein G. S.,Andes C.,Graves D.,Nest D.,Hudson E. A.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cyclic Self-Limiting Etching of Organic Polymers;ACS Applied Polymer Materials;2021-06-18

2. Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist;Journal of Vacuum Science & Technology A;2020-09

3. Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching;Japanese Journal of Applied Physics;2018-08-31

4. Polymer etching by atmospheric‐pressure plasma jet and surface micro‐discharge sources: Activation energy analysis and etching directionality;Plasma Processes and Polymers;2018-03-05

5. Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-20

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