Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides;Solid-State Electronics;2021-11
2. Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode;Beilstein Journal of Nanotechnology;2021-10-06
3. Injection and Retention Characterization of Trapped Charges in Electret Films by Electrostatic Force Microscopy and Kelvin Probe Force Microscopy;physica status solidi (a);2020-09-22
4. A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods;Journal of Applied Physics;2020-08-21
5. Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories;IEEE Transactions on Device and Materials Reliability;2017-03
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