Actinic extreme ultraviolet lithography mask blank defect inspection by photoemission electron microscopy-Reference-Cited by-同舟云学术

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Actinic extreme ultraviolet lithography mask blank defect inspection by photoemission electron microscopy

Published:2006 Issue:6 Volume:24 Page:2631
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lin Jingquan,Neuhaeusler Ulrich,Slieh Jawad,Brechling Armin,Kleineberg Ulf,Heinzmann Ulrich,Oelsner Andreas,Valdaitsev Dima,Schoenhense Gerd,Weber Nils,Escher Matthias,Merkel Michael

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applications in Other Fields;Surface Microscopy with Low Energy Electrons;2014

2. Wavelength-specific reflections: A decade of extreme ultraviolet actinic mask inspection research;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

3. Depth-resolved soft x-ray photoelectron emission microscopy in nanostructures via standing-wave excited photoemission;Applied Physics Letters;2008-12-15

4. Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy;Optics Express;2008-09-15

5. Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy;Microelectronic Engineering;2008-05

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