Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy-Reference-Cited by-同舟云学术

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Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy

Published:2008-05 Issue:5-6 Volume:85 Page:922-924
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lin Jingquan,Maul J.,Weber N.,Holfeld Ch.,Escher M.,Merkel M.,Schoenhense G.,Kleineberg U.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Actinic inspection of extreme ultraviolet programed multilayer defects and cross-comparison measurements

2. International Technology Roadmap for Semiconductors, see www.itrs.org.

3. Actinic detection and signal characterization of multilayer defects on EUV mask blanks

4. Actinic mask metrology for extreme ultraviolet lithography

5. Actinic extreme ultraviolet lithography mask blank defect inspection by photoemission electron microscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-07

2. At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors;Applied Physics Express;2012-10-25

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