Epitaxial growth of 3C–SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8-Reference-Cited by-同舟云学术

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Epitaxial growth of 3C–SiC on Si(100) by pulsed supersonic free jets of Si(CH3)4 and Si3H8

Published:1998-03 Issue:2 Volume:16 Page:763-765
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Ikoma Y.,Endo T.,Watanabe F.,Motooka T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581056

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon;Japanese Journal of Applied Physics;2019-07-10

2. Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates;Journal of Crystal Growth;2017-02

3. Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane;Journal of Crystal Growth;2015-05

4. Nanopore Formation on SOI(100) by CH₃SiH₃ Pulse Jet CVD: SiC Growth Temperature Dependence;Materials Science Forum;2013-03

5. Semiconductor nanopores formed by chemical vapor deposition of heteroepitaxial SiC films on SOI(100) substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

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