Nanopore Formation on SOI(100) by CH3SiH3 Pulse Jet CVD: SiC Growth Temperature Dependence

Abstract

We investigated the formation of nanopores on top Si layers of silicon on insulator substrates by CH3SiH3pulse jet chemical vapor deposition. Nanopores were obtained by chemical etching of the buried oxide layer below the pits which were introduced during the SiC growth. The high nanopore density was obtained when the SiC growth temperature was set at 925 °C. The nanopore density gradually decreased with increasing the temperature at higher SiC growth temperature. The pore size increased with increasing the SiC growth temperature. These results suggest that pore density and size strongly depend on the SiC growth temperature.