Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates
Author:
Funder
JSPS
Hirosaki University
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference47 articles.
1. Epitaxial graphene
2. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
3. Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient
4. Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate
5. Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Direct graphene synthesis on Si(1 0 0) by inductively coupled plasma beam source;Applied Surface Science;2022-04
2. Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate;Japanese Journal of Applied Physics;2019-07-22
3. Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon;Japanese Journal of Applied Physics;2019-07-10
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