Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate-Reference-Cited by-同舟云学术

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Published:2009 Issue: Volume:7 Page:107-109
ISSN:1348-0391
Container-title:e-Journal of Surface Science and Nanotechnology
language:en
Short-container-title:e-J. Surf. Sci. Nanotechnol.

Author:

Miyamoto Yu¹,Handa Hiroyuki¹,Saito Eiji¹,Konno Atsushi¹,Narita Yuzuru²,Suemitsu Maki¹³,Fukidome Hirokazu⁴,Ito Takashi⁴,Yasui Kanji⁵,Nakazawa Hideki⁶,Endoh Tetsuo⁴

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University, Japan

2. Department of Electrical Engineering, Yamagata University, Japan

3. CREST, Japan Science and Technology Agency, Japan

4. Center for Interdisciplinary Research, Tohoku University, Japan

5. Dept. of Electrical Engineering, Nagaoka University of Technology, Japan

6. Dept. of Materials Science and Technology, Hirosaki University, Japan

Publisher

Surface Science Society Japan

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanics of Materials,Condensed Matter Physics,Bioengineering,Biotechnology

Link

http://www.jstage.jst.go.jp/article/ejssnt/7/0/7_0_107/_pdf

Reference21 articles.

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2. Gate-Variable Optical Transitions in Graphene

3. Spin Injection into a Graphene Thin Film at Room Temperature

4. Electric Field Effect in Atomically Thin Carbon Films

5. [5] C. Riedl, U. Starke, J. Bernhardt, M. Franke, and K. Heinz, Phys. Rev. B 76, 245406 (2007).

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