Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane-Reference-Cited by-同舟云学术

Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane

Published:2015-05 Issue: Volume:418 Page:52-56
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakazawa Hideki,Suzuki Daiki,Narita Tsugitada,Meguro Kazuki,Tsuchiya Masato

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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5. Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

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