Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124230
Reference15 articles.
1. Surface-Structure-Controlled Heteroepitaxial Growth of3C–SiC(001)3×2on Si(001): Simulations and Experiments
2. Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2
3. Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
4. Reaction of Si surfaces with a C2H4 beam
5. Micropipes and voids at β¨SiC/Si(100) interfaces: an electron microscopy study
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition;ECS Journal of Solid State Science and Technology;2016-12-14
2. Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane;Journal of Crystal Growth;2015-05
3. Growth mechanisms of 3C-SiC layer by carbonization of Si(100) substrates in high-vacuum region;Japanese Journal of Applied Physics;2014-03-27
4. Study on AlGaN/GaN growth on carbonized Si substrate;Japanese Journal of Applied Physics;2014-01-01
5. Epitaxial graphene on silicon substrates;Journal of Physics D: Applied Physics;2010-09-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3